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mrf8s9200nr3 1 rf device data freescale semiconductor rf power field effect transistor n--channel enhancement--mode lateral mosfet designed for cdma base station applications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1400 ma, p out = 58 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 920 mhz 19.9 37.7 6.1 --36.2 940 mhz 19.9 37.1 6.1 --36.6 960 mhz 19.5 36.8 6.0 --36.0 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 300 watts cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 200 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? 225 c capable plastic package ? designed for digital predistortion error correction systems ? optimized for doherty applications ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 58 w cw, 28 vdc, i dq = 1400 ma case temperature 80 c, 200 w cw, 28 vdc, i dq = 1400 ma r jc 0.30 0.25 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s9200n rev. 1, 5/2010 freescale semiconductor technical data mrf8s9200nr3 920--960 mhz, 58 w avg., 28 v single w--cdma lateral n--channel rf power mosfet case 2021--03, style 1 o m -- 7 8 0 -- 2 plastic ? freescale semiconductor, inc., 2009--2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf8s9200nr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 400 adc) v gs(th) 1.5 2.3 3 vdc gate quiescent voltage (v dd =28vdc,i d = 1400 madc, measured in functional test) v gs(q) 2.3 3 3.8 vdc drain--source on--voltage (v gs =10vdc,i d =3.3adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 58 w avg., f = 940 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 18 19.9 21 db drain efficiency d 34 37.1 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.8 6.1 ? db adjacent channel power ratio acpr ? --36.6 -- 3 5 dbc input return loss irl ? -- 2 2 -- 9 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out =58wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 920 mhz 19.9 37.7 6.1 --36.2 -- 1 4 940 mhz 19.9 37.1 6.1 --36.6 -- 2 2 960 mhz 19.5 36.8 6.0 --36.0 -- 1 5 1. part internally matched both on input and output. (continued)
mrf8s9200nr3 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 920--960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 200 ? w imd symmetry @ 160 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 15 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 45 ? mhz gain flatness in 40 mhz bandwidth @ p out =58wavg. g f ? 0.7 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.012 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.001 ? dbm/ c
4 rf device data freescale semiconductor mrf8s9200nr3 figure 1. mrf8s9200nr3 test circuit component layout mrf8s9200n rev 0 cut out area r1 v gs v ds b1 c31 c1 c2 c4 c5 r2 c6 c7 c3 c8 c9 c30 c32 c23 c24 c27 c28 c12 c13 c15 c16 c17 c18 c20 c14 c19 c10 c11 c21 c22 c29 c25 c26 table 6. mrf8s9200nr3 test circuit c omponent designations and values part description part number manufacturer b1 ferrite beads, short 2743019447 fair--rite c1, c5, c19, c21, c22, c23, c24 39 pf chip capacitors atc100b390jt500xt atc c2 2 pf chip capacitor atc100b2r0bt500xt atc c3 6.2 pf chip capacitor atc100b6r2bt500xt atc c4 2.2 f chip capacitor c1825c225j5rac--tu kemet c6, c7, c8, c9 3.3 pf chip capacitors atc100b3r3ct500xt atc c10, c12 6.8 pf chip capacitors atc100b6r8ct500xt atc c11, c13 5.1 pf chip capacitors atc100b5r1ct500xt atc c14, c20 0.8 pf chip capacitors atc100b0r8bt500xt atc c15, c17 0.5 pf chip capacitors atc100b0r5bt500xt atc c16 1.5 pf chip capacitor atc100b1r5bt500xt atc c18 1.2 pf chip capacitor atc100b1r2bt500xt atc c25, c26, c27, c28 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c29, c30 470 f, electrolytic capacitors mcgpr63v477m13x26--rh multicomp c31 47 f, 50 v electrolytic capacitor 476kxm050m illinois cap. c32 10 pf chip capacitor atc100b100jt500xt atc r1 3.3 ? , 1/2 w chip resistor p3.3vct--nd panasonic r2 0 ? , 3.5 a chip resistor crcw12060000z0ea vishay pcb 0.030 , r =3.5 rf--35 taconic
mrf8s9200nr3 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 800 irl g ps acpr f, frequency (mhz) figure 2. output peak--to--average ratio compression (parc) broadband performance @ p out = 58 watts avg. -- 2 5 -- 5 -- 1 0 -- 1 5 -- 2 0 16 21 20.5 20 -- 4 0 44 42 40 38 -- 3 0 -- 3 2 -- 3 4 -- 3 6 d , drain efficiency (%) d g ps , power gain (db) 19.5 19 18.5 18 17.5 17 16.5 825 850 875 900 925 950 975 1000 36 -- 3 8 -- 3 0 parc parc (db) -- 2 0 -- 0 . 5 -- 1 -- 1 . 5 -- 2 . 5 acpr (dbc) figure 3. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 160 w (pep), i dq = 1400 ma two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 4. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 50 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 30 70 90 130 25 55 50 45 40 35 30 d , drain efficiency (%) --1 db = 49.04 w 110 d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 20 g ps , power gain (db) 19.5 19 18.5 18 17.5 17 g ps v dd =28vdc,p out =58w(avg.) i dq = 1400 ma, single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf v dd =28vdc,i dq = 1400 ma, f = 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf --2 db = 69.69 w --3 db = 95.95 w
6 rf device data freescale semiconductor mrf8s9200nr3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 5. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 2 4 -- 2 8 14 24 0 100 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 23 22 10 100 300 10 -- 6 0 acpr (dbc) 21 20 19 -- 2 0 -- 3 2 -- 3 6 -- 4 0 figure 6. broadband frequency response -- 1 5 25 550 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 10 5 -- 5 650 gain (db) 20 gain 750 850 950 1050 1150 1250 1350 irl -- 3 0 10 -- 5 -- 1 0 -- 1 5 -- 2 0 irl (db) -- 1 0 -- 2 5 f = 920 mhz v dd =28vdc,i dq = 1400 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf 18 17 16 15 70 60 90 80 -- 5 6 -- 5 2 -- 4 8 -- 4 4 940 mhz 960 mhz 960 mhz 940 mhz 920 mhz 960 mhz 920 mhz 0 15 0 5 w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 7. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 8. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
mrf8s9200nr3 7 rf device data freescale semiconductor v dd =28vdc,i dq = 1400 ma, p out =58wavg. f mhz z source ? z load ? 820 1.16 -- j2.85 2.29 -- j2.08 840 1.09 -- j2.63 2.11 -- j1.95 860 1.04 -- j2.45 1.94 -- j1.81 880 0.98 -- j2.27 1.76 -- j1.68 900 0.93 -- j2.08 1.59 -- j1.51 920 0.88 -- j1.90 1.42 -- j1.33 940 0.83 -- j1.72 1.28 -- j1.13 960 0.79 -- j1.55 1.14 -- j0.93 980 0.76 -- j1.39 1.02 -- j0.73 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor mrf8s9200nr3 alternative peak tune load pull characteristics 36 p in , input power (dbm) v dd =28vdc,i dq = 1400 ma, pulsed cw, 10 sec(on), 10% duty cycle 54 52 50 37 39 38 actual ideal 55 53 49 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 51 56 58 59 35 34 33 30 40 32 31 57 f = 960 mhz f = 940 mhz f = 920 mhz f = 920 mhz f = 940 mhz f = 960 mhz f (mhz) p1db p3db watts dbm watts dbm 920 267 54.3 332 55.2 940 263 54.2 327 55.1 960 261 54.2 327 55.2 test impedances per compression level f (mhz) z source ? z load ? 920 p1db 0.70 -- j1.66 0.82 -- j1.52 940 p1db 0.68 -- j1.85 0.73 -- j1.60 960 p1db 0.87 -- j1.99 0.76 -- j1.70 figure 10. pulsed cw output power versus input power @ 28 v
mrf8s9200nr3 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor mrf8s9200nr3
mrf8s9200nr3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrf8s9200nr3 product documentation, tools and software refer to the following documents, tools and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2009 ? initial release of data sheet 1 may 2010 ? revised vswr statement to correct output power from 200 watts cw to 300 watts cw, p. 1 ? replaced case outline 2021--01, issue o, with 2021--03, issue b, p. 1, 9--11. changed ?drain lead? to ?pin 1? and ?gate lead? to ?pin 2? on sheet 1. correct ed ?a2? to ?a1? in note 7, and changed dimension a1 from 0.061 --0.063 (1.55--1.60 mm) to 0.059 --0.065 (1.50--1.65 mm) on sheet 3. added 4 exposed source tabs at dimension e1 on sheets 1 and 2. added dimension e1 0.721 --0.729 (18.31--18.52 mm) in the table, revised d1 minimum dimension from 0.730 (18.54 mm) to 0.720 (18.29 mm), revised dimension e2 from 0.312 (7.92 mm) to 0.306 (7.77 mm), and revised wording of note 8 on sheet 3. ? changed human body model esd rating from class 1c to class 2 to reflect recent esd test results of the device, p. 2
mrf8s9200nr3 13 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8s9200n rev. 1, 5/2010

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